Magnetic field sensor using spin polarized current

Details Magnetic field sensor using spin polarized current Magnetic field sensor using spin polarized current

2006-03-28

2006-03-28

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S170000, C257S295000

Reexamination Certificate

active

07020013

ABSTRACT:
A hybrid magnetic-semiconductor structure can be used as a magnetic field sensor. The hybrid device uses ferromagnetic materials for implementing a variable spin resistance. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.

REFERENCES:
patent: 3650581 (1972-03-01), Boden et al.
patent: 4314349 (1982-02-01), Batcher
patent: 4360899 (1982-11-01), Dimyan et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4663607 (1987-05-01), Kitada et al.
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5173873 (1992-12-01), Wu et al.
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5329486 (1994-07-01), Lage
patent: 5396455 (1995-03-01), Brady et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5448515 (1995-09-01), Fukami et al.
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5580814 (1996-12-01), Larson
patent: 5594366 (1997-01-01), Khong et al.
patent: 5608593 (1997-03-01), Kim et al.
patent: 5621338 (1997-04-01), Liu et al.
patent: 5629922 (1997-05-01), Moodera et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5652875 (1997-07-01), Taylor
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5998040 (1999-12-01), Nakatani et al.
patent: 6064083 (2000-05-01), Johnson
patent: 6201259 (2001-03-01), Sato et al.
patent: 6205008 (2001-03-01), Gijs et al.
patent: 6342713 (2002-01-01), Johnson
patent: 6381170 (2002-04-01), Prinz
patent: 6388916 (2002-05-01), Johnson
R. Meservey, P. M. Tedrow and P. Fulde, Phys. Rev. Lett. 25, 1270 (1970).
P.M. Tedrow and R. Meservey, Phys. Rev. Lett. 26, 192 (1971).
P.M. Tedrow and R. Meservey, Phys. Rev. B 7, 318 (1973). (9 pages).
Paul Horowitz and Winfield Hill,The Art of Electronics, Cambridge Univ. Press, Cambrige U.K. (1980); see p. 328.
Mark Johnson and R. H. Silsbee,Interfacial Charge-Spin Coupling; Injection and Detection of Spin Magnetization in Metals, Phys. Rev. Lett. 55, 1790 (1985). (4 pages).
Mark Johnson and R. H. Silsbee,A Thermodynamic Analysis of Interfacial Transport and of the Thermomagnetoelectric System, Phys. Rev. B 35, 4959 (1987). (14 pages).
P. C. van Son, H. van Kampen and P. Wyder, Phys. Rev. Lett. 58, 2271 (1987). (3 pages).
Mark Johnson and R. H. Silsbee,Ferromagnet-Nonferromagnet Interface Resistance, Phys. Rev. Lett. 60, 377 (1988).
Mark Johnson and R. H. Silsbee,Coupling of Electronic Charge and Spin at a Ferro-magnetic—Paramagnetic Interface, Phys. Rev. B 37, 5312 (1988). (14 pages).
Mark Johnson and R. H. Silsbee,The Spin Injection Experiment, Phys. Rev. B 37, 5326 (1988). (10 pages).
Mark Johnson and H. Silsbee,Electron Spin Injection and Detection at a Ferromagnetic-Paramagnetic Interface, J. Appl. Phys. 63, 3934 (1988). (6 pages).
P. C. van Son, H. van Kampen and P. Wyder, Phys. Rev. Lett. 60, 378 (1988).
R. S. Popovic,Hall-effect Devices, Sens. Actuators 17, 39 (1989).
James Daughton,Magnetoresistive Memory Technology, Thin Solid Films 216, 162 (1992). (7 pages).
J. De Boeck, J. Harbison et al.,Non-volatile Memory Characteristics of Submicrometer Hall Structures Fabricated in Epitaxial Ferromagnetic MnA1 Films on GaAs, Electronics Letters 29, 421 (1993). (3 pages).
Mark Johnson,Spin Accumulation in Gold Films, Phys. Rev. Lett. 70, 2142 (1993). (4 pages).
Mark Johnson,Bipolar Spin Switch, Science 260, 320 (1993). (4 pages).
Mark Johnson,Bilayer Embodiment of the Bipolar Spin Switch, Appl. Phys. Lett. 63, 1435 (1993). (3 pages).
Mark Johnson,The All-Metal Spin Transistor, I.E.E.E. Spectrum Magazine 31 No. 5, 47 (1994). (5 pages).
Mark Johnson,Spin Polarization of Gold Films via Transport, J. Appl. Phys. 75, 6714 (1994). (6 pages).
Mark Johnson,Spin-Coupled Resistance Observed in Ferromagnet-Superconductor—Ferromagnet Trilayers, Appl. Phys. Lett., Sep. 12, 1994.
Mark Johnson,The Bipolar Spin Transistor,I.E.E.E. Potentials 14, 26 (1995).
S. T. Chui and J. R. Cullen,Spin Transmission in Metallic Trilayers, Phys. Rev. Lett. 74, 2118 (1995). (4 pages).

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