Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1985-12-24
1989-09-12
Stoll, Robert L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG64, 156DIG76, 505818, 427 47, 427 62, C30B 700
Patent
active
048656810
ABSTRACT:
A method of growing an epitaxial interface comprising the steps of select a crystalline substrate (e.g. Si) characterized by a crystal lattice substantially similar to the crystal lattice to be grown (e.g. CuCl); applying a magnetic field to the crystalline substrate; and growing a crystal layer on the selected substrate in the presence of a magnetic field. Preferably the crystal growth takes place from a liquid phase eutectic mixture (e.g. CuCl/NH.sub.4 Cl) at conditions near the eutectic point. The epitaxial interface produced is very reproducible, uniform and stable, yet the region appears to be highly strained due to the lattice mismatch. Anomalous superdiamagnetism, very low electrical resistivity and the ability to trap and channel light (index of refraction approaching infinity) are observed at the epitaxial interface at essentially ambient conditions suggestive of high temperature superconductivity. Cessation of the anomalous properties as a function of magnetic field strength is determined by selection of the magnetic field strength employed during crystal growth.
REFERENCES:
patent: 3961103 (1976-06-01), Aisenberg
patent: 3975218 (1976-08-01), Ruehrwein
patent: 4222814 (1980-09-01), Reitz
Kvapil et al., Jl. of Crystal Growth 8, No. 2, 1971, pp. 162-164.
Utech et al., Jl. of Applied Physics, vol. 37, No. 5, 1966, pp. 2021-2023.
Board of Regents Acting for and on Behalf of the University of M
Breneman R. Bruce
Stevenson Robert B.
Stoll Robert L.
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