Magnetic field enhanced plasma processing chamber

Details Magnetic field enhanced plasma processing chamber Magnetic field enhanced plasma processing chamber

1993-07-19

1994-09-13

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 20429837, 20429838, 20429816, H01L 2100

Patent

active

053465792

ABSTRACT:
A plasma etch reactor comprising a remote source of plasma mounted on a vacuum processing chamber has a large permanent magnet ring around the area of the chamber where the plasma enters, magnetically oriented so that magnetic field lines are removed from said plasma in the processing chamber, and two or more pairs of magnet rings mounted around said chamber to form a series of magnetic cusps about the wall of said chamber, to thereby inhibit plasma electrons from striking the wall of said chamber. A substrate entry port can be fitted between the magnet rings, allowing automatic ingress and egress of said substrates with maximum efficiency.

REFERENCES:
patent: 4483737 (1984-11-01), Mantei
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4842683 (1989-06-01), Cheng et al.
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5032205 (1991-07-01), Hershkowitz et al.
patent: 5133825 (1992-07-01), Hakamata et al.
patent: 5133826 (1992-07-01), Dandl
EP Search Report.

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