Magnetic field-enhanced plasma etch reactor

Details Magnetic field-enhanced plasma etch reactor Magnetic field-enhanced plasma etch reactor

1991-09-17

1993-06-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 20429837, 118724, B44C 122

Patent

active

052156192

ABSTRACT:
A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

REFERENCES:
patent: 4261762 (1981-04-01), King
patent: 4486287 (1984-12-01), Fournier
patent: 4492610 (1985-01-01), Okano et al.
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4631106 (1986-12-01), Nakazato et al.
patent: 4632719 (1986-12-01), Chow et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4673482 (1987-06-01), Setoyama et al.
patent: 4740268 (1988-04-01), Bukhman
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 4829215 (1989-05-01), Kim et al.

Affiliated with

Also associated with

Rating

Magnetic field-enhanced plasma etch reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic field-enhanced plasma etch reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic field-enhanced plasma etch reactor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1811951