Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1988-04-25
1989-06-27
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
156643, 156646, 204298, B44C 122, C03C 1500, C03C 2506, H01L 21306
Patent
active
048426830
ABSTRACT:
A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
REFERENCES:
patent: 3566960 (1971-03-01), Stuart
patent: 4282924 (1981-08-01), Faretra
patent: 4508161 (1985-04-01), Holden
patent: 4680061 (1987-07-01), Lamont
patent: 4724621 (1988-02-01), Hobson et al.
patent: 4764076 (1988-08-01), Layman et al.
Perkins et al, IBM Tech. Dis. Bul., vol. 13, No. 5, 10/70, p. 1182, "Cooling of Chrome Glass Plates Produced by RF Sputter Etch".
Bauer et al, IBM Tech. Dis. Bul., vol. 16, No. 10, 3/74, p. 3289, "Vacuum Holding and Testing Fixture".
Hammer, IBM Tech. Dis. Bul., vol. 19, No. 6, 11/76, pp. 2270-2271, "Cooling Ion-Implantation Target".
Andrews Dana L.
Chang Mei
Cheng David
Maydan Dan
Somekh Sasson
Applied Materials Inc.
Powell William A.
LandOfFree
Magnetic field-enhanced plasma etch reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic field-enhanced plasma etch reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic field-enhanced plasma etch reactor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-811022