Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-06-19
1999-07-20
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 32, 117208, 117917, 117932, C30B 1522
Patent
active
059251859
ABSTRACT:
A method for fabricating a semiconductor single crystal by the MCZ method by which it is possible to pull large diameter and heavy semiconductor single crystals without breaking the contraction portion, is provided.
In the contracting step, change the shape of the crystal growth interface by making the range of the temperature fluctuation caused by convection in the vicinity of the melt surface more than 5.degree. C. so as to eliminate the dislocation in the contracted portion. When a transverse magnetic field is applied by magnets 6,6, the magnetic field intensity is set below 2000 Gauss to properly change the shape of the crystal growth interface to form the contracted portion 10. Thus,even though the diameter of the contracted portion 10 is larger than normal, free dislocation is achieved. After the dislocation is eliminated, the magnetic field intensity is recovered and shoulder 11 is formed. When a cusp magnetic field is applied, the contracting is performed when the magnetic field intensity of one of the upper-and-lower magnets being increased while the magnetic field intensity of another magnet is decreased or the upper-and-lower magnets are moved in a vertical direction to make the vicinity of the melt surface similar to a longitudinal magnetic field. After dislocation is eliminated, the magnetic field intensity of the upper-and-lower magnets or the position of the magnets is recovered.
REFERENCES:
patent: 4592895 (1986-06-01), Matsutani
patent: 5178720 (1993-01-01), Frederick
patent: 5359959 (1994-11-01), Fusegawa
Inagaki Hiroshi
Kawashima Shigeki
Nakajima Hirotaka
Komatsu Electronic Metals Co. Ltd.
Kunemund Robert
LandOfFree
Magnetic field-applied fabrication method for a semiconductor si does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic field-applied fabrication method for a semiconductor si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic field-applied fabrication method for a semiconductor si will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1318652