Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-07-19
2005-07-19
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000, C365S158000
Reexamination Certificate
active
06920063
ABSTRACT:
A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
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Huai Yiming
Nguyen Paul P.
Grandis Inc.
Phung Anh
Sawyer Law Group LLP
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