Magnetic element having perpendicular anisotropy with...

Details Magnetic element having perpendicular anisotropy with... Magnetic element having perpendicular anisotropy with...

2009-09-15

2011-12-06

Bernatz, Kevin (Department: 1785)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C428S811200, C428S811500, C360S324110, C360S324120

Reexamination Certificate

active

08072800

ABSTRACT:
Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.

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patent: 2002/0048128 (2002-04-01), Kamiguchi et al.
patent: 2009/0246557 (2009-10-01), Horng et al.
Nakayama et al., “Spin transfer switching in TbCoFe/CoFeB/MgO/CoFeB/TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy”, Journal of Applied Physics 103, 07A710 (2008).
Kishi et al., “Lower-current and Fast switching of A Perpendicular TMR for High Speed and High density Spin-Transfer-Torque MRAM”, IEEE 2008, pp. 309-312.
Yoshikawa et al., “Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L10-FePt Electrodes”, IEEE Transactions on Magnetics, vol. 44, No. 11, Nov. 2008, pp. 2573-2576.

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