Magnetic domain wall random access memory

Details Magnetic domain wall random access memory Magnetic domain wall random access memory

2008-07-07

2011-10-18

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S048000, C365S049130, C365S055000, C365S145000, C365S157000

Reexamination Certificate

active

08040724

ABSTRACT:
A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6055179 (2000-04-01), Koganei et al.
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6834005 (2004-12-01), Parkin
patent: 2001257395 (2001-09-01), None
patent: 2003045010 (2003-02-01), None
patent: 2003110094 (2003-04-01), None
patent: 2004179183 (2004-06-01), None
patent: 2005505889 (2005-02-01), None
patent: 2005093488 (2005-04-01), None
patent: 2005123617 (2005-05-01), None
patent: 2005150303 (2005-06-01), None
patent: 2005191032 (2005-07-01), None
patent: 2005236250 (2005-09-01), None
patent: 2006073930 (2006-03-01), None
patent: 2006093578 (2006-04-01), None
patent: 2006270069 (2006-10-01), None
patent: 2006287081 (2006-10-01), None
patent: 2007103663 (2007-04-01), None
patent: 20070258460 (2007-10-01), None
patent: 2007317895 (2007-12-01), None
patent: 2005069368 (2005-07-01), None
patent: 2006046591 (2006-05-01), None
patent: 2007020823 (2007-02-01), None
N. Sakimura et al., “MRAM Cell Technology for Over 500MHz SoC”, 2006 Symposium on VLSI Circuits, Digest of Technical Papers, pp. 136-137.
A. Thiaville et al., “Micromagnetic understanding of current-driven domain wall motion in patterned nanowires”, Europhysics Letters, vol. 69 (6), 2005, pp. 990-996.
S. Imada et al., “Perpendicular magnetization of L10-ordered FePt films in the thinnest limit”, Applied Physics Letters 90, 2007, pp. 132507-1-3.
C. Platt et al., “Structural and magnetic properties of CoCrPt perpendicular media grown on different buffer layers”, Journal of Magnetism and Magnetic Materials, 247, 2002, pp. 153-158.
International Search Report for PCT/JP2008/062277 mailed Oct. 7, 2008.
J.C. Slonczewski, “Current-driven excitation of magnetic multilayers”, Journal of Magnetism & Magnetic Materials, 159, L1-L7, 1996.
A. Yamaguchi et al., “Real-Space Observation of Current-Driven Domain Wall Motion in Submicron Magnetic Wires”, Physical Review Letters, vol. 92, No. 7, Feb. 20, 2004, pp. 077205-1-4.
A. Yamaguchi et al., “Reduction of Threshold Current Density for Current-Driven Domain Wall Motion using Shape Control”, Japanese Journal of Applied Physics, vol. 45, No. 5A, 2006, pp. 3850-3853.
H. Numata et al., “Magnetic Configuration of a New Memory Cell Utilizing Domain Wall Motion”, Intermag 2006 Digest, HQ-03, 2006, p. 933.
D. Ravelosona et al., “Threshold currents to move domain walls in films with perpendicular anisotropy”, Applied Physics Letters, vol. 90, 072508, 2007.
D.D. Djayaprawira et al., “230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions”, Applied Physics Letters, vol. 86, 092502, 2005.

Affiliated with

Also associated with

Rating

Magnetic domain wall random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic domain wall random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic domain wall random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4266980