Magnetic domain random access memory

Details Magnetic domain random access memory Magnetic domain random access memory

1980-02-15

1982-11-23

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365 2, G11C 11155

Patent

active

043608990

ABSTRACT:
In a non-volatile random access memory, a selected one of a plurality of magnetic cells arranged in an array on a major surface of a substrate is inductively switched between opposite remanent, i.e. permanent, states upon the simultaneous application of electrical pulses to a pair of conductors intersecting adjacent the selected cell, each of the electrical pulses having an amplitude less than, but the sum thereof being at least equal to, the amplitude required to inductively switch the remanent state of the selected cell.

REFERENCES:
patent: 3831154 (1974-08-01), Epstein et al.
Bell System Technical Journal-Oct. 1967, pp. 1901-1925.

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