Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-04-16
2010-12-28
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07859034
ABSTRACT:
Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6137662 (2000-10-01), Huai et al.
patent: 6146775 (2000-11-01), Fujita et al.
patent: 6172904 (2001-01-01), Anthony et al.
patent: 6175476 (2001-01-01), Huai et al.
patent: 6201673 (2001-03-01), Rottmayer et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6222707 (2001-04-01), Huai et al.
patent: 6266218 (2001-07-01), Carey et al.
patent: 6351355 (2002-02-01), Min et al.
patent: 6351409 (2002-02-01), Rizzo et al.
patent: 6381105 (2002-04-01), Huai et al.
patent: 6438026 (2002-08-01), Gillies et al.
patent: 6447935 (2002-09-01), Zhang et al.
patent: 6469926 (2002-10-01), Chen
patent: 6518071 (2003-02-01), Durlam et al.
patent: 6538859 (2003-03-01), Gill
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6603677 (2003-08-01), Redon et al.
patent: 6633498 (2003-10-01), Engel et al.
patent: 6649960 (2003-11-01), Cross
patent: 6687098 (2004-02-01), Huai
patent: 6714444 (2004-03-01), Huai et al.
patent: 6771534 (2004-08-01), Stipe
patent: 6791868 (2004-09-01), Gider et al.
patent: 6801414 (2004-10-01), Amano et al.
patent: 6801471 (2004-10-01), Viehmann et al.
patent: 6829161 (2004-12-01), Huai et al.
patent: 6838740 (2005-01-01), Huai et al.
patent: 6847547 (2005-01-01), Albert et al.
patent: 6888704 (2005-05-01), Diao et al.
patent: 6888742 (2005-05-01), Nguyen et al.
patent: 6893741 (2005-05-01), Doerner et al.
patent: 6920063 (2005-07-01), Huai et al.
patent: 6933155 (2005-08-01), Albert et al.
patent: 6950335 (2005-09-01), Dieny et al.
patent: 6958927 (2005-10-01), Nguyen et al.
patent: 6967863 (2005-11-01), Huai
patent: 6979586 (2005-12-01), Guo et al.
patent: 6985338 (2006-01-01), Gill
patent: 6985385 (2006-01-01), Nguyen et al.
patent: 6989972 (2006-01-01), Stoev et al.
patent: 6992359 (2006-01-01), Nguyen et al.
patent: 7006375 (2006-02-01), Covington
patent: 7009877 (2006-03-01), Huai et al.
patent: 7027268 (2006-04-01), Zhu et al.
patent: 7057921 (2006-06-01), Valet
patent: 7088609 (2006-08-01), Valet
patent: 7098494 (2006-08-01), Pakala et al.
patent: 7105372 (2006-09-01), Min et al.
patent: 7106559 (2006-09-01), Hasegawa et al.
patent: 7106624 (2006-09-01), Huai et al.
patent: 7110287 (2006-09-01), Huai et al.
patent: 7176065 (2007-02-01), Seyyedy et al.
patent: 7224601 (2007-05-01), Panchula et al.
patent: 2002/0015823 (2002-02-01), Mauler et al.
patent: 2002/0037595 (2002-03-01), Hosotani
patent: 2002/0097534 (2002-07-01), Sun et al.
patent: 2002/0105827 (2002-08-01), Redon et al.
patent: 2003/0222322 (2003-12-01), Park
patent: 2004/0130936 (2004-07-01), Nguyen et al.
patent: 2004/0136231 (2004-07-01), Huai et al.
patent: 2004/0170055 (2004-09-01), Albert et al.
patent: 2004/0235201 (2004-11-01), Albert et al.
patent: 2005/0041342 (2005-02-01), Huai et al.
patent: 2005/0063222 (2005-03-01), Huai et al.
patent: 2005/0106810 (2005-05-01), Pakala et al.
patent: 2005/0110004 (2005-05-01), Parkin et al.
patent: 2005/0136600 (2005-06-01), Huai
patent: 2005/0184839 (2005-08-01), Nguyen et al.
patent: 2005/0237787 (2005-10-01), Huai et al.
patent: 2005/0254286 (2005-11-01), Valet
patent: 2005/0254287 (2005-11-01), Valet
patent: 2006/0018057 (2006-01-01), Huai et al.
patent: 2006/0034118 (2006-02-01), Saito et al.
patent: 2006/0049472 (2006-03-01), Diao et al.
patent: 2006/0081953 (2006-04-01), Nguyen et al.
patent: 2006/0102969 (2006-05-01), Huai et al.
patent: 2006/0114618 (2006-06-01), Hosomi et al.
patent: 2006/0128038 (2006-06-01), Pakala et al.
patent: 2006/0141640 (2006-06-01), Huai et al.
patent: 2006/0187591 (2006-08-01), Gill et al.
patent: 2006/0192237 (2006-08-01), Huai
patent: 2006/0221676 (2006-10-01), Qian et al.
patent: 2006/0281258 (2006-12-01), Dieny et al.
patent: 2007/0063236 (2007-03-01), Huai et al.
patent: 2007/0063237 (2007-03-01), Huai et al.
patent: 2007/0171694 (2007-07-01), Huai et al.
patent: 2008/0061388 (2008-03-01), Diao et al.
patent: 2006-093432 (2006-04-01), None
patent: WO2007/035786 (2007-03-01), None
patent: WO2007/075889 (2007-07-01), None
Albert, et al., “Spin-polarized current switching of a Co thin film nanomagnet”,Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811, Dec. 4, 2000.
Anderson, et al., “Spin valves exchange biased by IrMn/PtMn laminated antiferromagnets”,J. Appl. Phys., vol. 87, pp. 4924-4926, May 1, 2000.
Berger, “Emission of spin waves by a magnetic multilayer traversed by a current”,Physical Review B, vol. 54, No. 13, pp. 9353-9358, Oct. 1, 1996.
Cowache et al., “Spin-valve structures with NiO pinning layers,” IEEE Transactions on Magnetics, vol. 34, Iss. 4, part 1, (Jul. 1998).
Cowburn et al., “Lateral interface anisotropy in nanomagnets,” Journal of Applied Physics, 87(9): 7067-7069 (May 1, 2000).
Devolder, T. et al., “Instability threshold versus switching threshold in spin-transfer-induced magnetization switching”, Physical Review B71, 184401-1-184401-6 (2005).
Doi, et al., “Magnetism of Co1-xFex-NOL in Specular Spin-Valves”,IEEE Transactions on Magnetics, vol. 40, No. 4, pp. 2263-2265, Jul. 2004.
Dokupil et al., Magnetostriction in combination with GMR/TMR-structures [online] Jun. 2, 2005, [retrieved pn Sep. 5, 2007] <URL: http://www.science24.com/paper/3919 >abstract.
Inomata et al., “Size-independent spin switching field using synthetic antiferromagnets,” Applied Physics Letters 82(16): 2667-2669 (Apr. 21, 2003).
Leighton et al., “Coercivity Enhancement in Exchange Biased Systems Driven by Interfacial Magnetic Frustration,” Physical Review Letters 84(15): 3466-3469 (Apr. 10, 2000).
Mancoff, F.B. et al., “Phase-locking in double-point-contact spin-transfer devices”, Nature, vol. 437:393-395 (2005).
Sharrock, M.P. et al., “Kinetic Effects in Coercivity Measurements”, IEEE Transactions on Magnetics, vol. Mag-17, No. 6:3020-3022 (1981).
Slonczewski, et al., “Current-driven excitation of magnetic multilayers”,Journal of Magnetism and Magnetic Materials, vol. 159, pp. L1-L7, 1996.
Thirion, C. et al., “Switching of magnetization by nonlinear resonance studied in single nanoparticles”,Nature Materials, Nature Publishing Group, www.nature.com
aturematerials, vol. 2, 524-527 (Aug. 2003).
Tulapurkar, et al., “Subnanosecond magnetization reversal in magnetic nanopillars by spin angular momentum transfer”,Applied Physics Letters, vol. 85, No. 22, pp. 5358-5360, Nov. 29, 2004.
Xi, Haiwen et al., “Spin-current effect on ferromagnetic resonance in patterned magnetic thin film structures”, J of Applied Physics 97, 033904-1-033904-5 (2005).
Zhang, et al., “40% tunneling magnetoresistance after anneal at 380 C for tunnel junctions with iron-oxide interface layers”,Journal of Applied Physics, vol. 89, No. 11, pp. 6665-6667, Jun. 1, 2001.
Chen Eugene Youjun
Diao Zhitao
Huai Yiming
Fish & Richardson P.C.
Grandis Inc.
Nguyen Dao H
Nguyen Tram H
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