Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-03-25
2008-03-25
Hu, Shouxiang (Department: 2811)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07349242
ABSTRACT:
A magnetic device has a layer containing fine pores and having wirings on both faces of the layer formed on a substrate, wherein at least a part of the pores are filled with a layered column formed by stacking magnetic layers and nonmagnetic layers alternately, and at least a part of the pores filled with a conductive column as writing wires for writing into the magnetic layers in the adjacent pores. The fine pores may be nano-holes of alumina formed by anodic oxidation. A part of the pores may serve to intercept a magnetic field. The magnetic layer may contain Co, and the nonmagnetic layer and/or the writing wire may contain Cu. The pores may be arranged in a honeycomb arrangement or a rectangular array. The ratio of the sectional area S (cm2) of the pore and the length (cm) of the pore satisfy the relation: 105<L/S>105.
REFERENCES:
patent: 5155093 (1992-10-01), Den et al.
patent: 5541868 (1996-07-01), Prinz
patent: 5764567 (1998-06-01), Parkin
patent: 6139713 (2000-10-01), Masuda et al.
patent: 6172902 (2001-01-01), Wegrowe et al.
patent: 6278231 (2001-08-01), Iwasaki et al.
patent: 6611034 (2003-08-01), Den
patent: 2002/0054461 (2002-05-01), Fujiwara et al.
patent: 10-1900090 (1998-07-01), None
patent: 10-283618 (1998-10-01), None
patent: 11-224422 (1999-08-01), None
patent: 2000-31462 (2000-01-01), None
Furneaux, et al., “The Formation of Controlled-Porosity Membranes from Anodically Oxidized Aluminium,” Nature, International Weekly Journal of Science, vol. 337, No. 6203, pp. 147-149, Jan. 12, 1989.
Masuda, et al., “Fabrication of Gold Nanodot Array Using Anodic Porous Alumina as an Evaporation Mask,” Japanese Journal of Applied Physics, vol. 35, Part 2, No. 1B, pp. L126-L129, Jan. 15, 1996.
Masuda, Solid State Physics, vol. 32, No. 5, pp. 493-499 (1996).
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hu Shouxiang
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