Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-03-25
2008-03-25
Hu, Shouxiang (Department: 2811)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
10968902
ABSTRACT:
A magnetic device has a layer containing fine pores and having wirings on both faces of the layer formed on a substrate, wherein at least a part of the pores are filled with a layered column formed by stacking magnetic layers and nonmagnetic layers alternately, and at least a part of the pores filled with a conductive column as writing wires for writing into the magnetic layers in the adjacent pores. The fine pores may be nano-holes of alumina formed by anodic oxidation. A part of the pores may serve to intercept a magnetic field. The magnetic layer may contain Co, and the nonmagnetic layer and/or the writing wire may contain Cu. The pores may be arranged in a honeycomb arrangement or a rectangular array. The ratio of the sectional area S (cm2) of the pore and the length (cm) of the pore satisfy the relation: 105<L/S>105.
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