Magnetic cell and magnetic memory

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S158000, C365S173000, C365S145000

Reexamination Certificate

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11328112

ABSTRACT:
A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6285581 (2001-09-01), Tehrani et al.
patent: 6469926 (2002-10-01), Chen
patent: 6603677 (2003-08-01), Redon et al.
patent: 6639830 (2003-10-01), Heide
patent: 6703249 (2004-03-01), Okazawa et al.
patent: 6714444 (2004-03-01), Huai et al.
patent: 1308317 (2001-08-01), None
patent: 1346155 (2002-04-01), None
F.J. Albert, et al., Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811, “Spin-Polarized Current Switching of a Co Thin FIJLM Nanomagnet”, Dec. 4, 2000.
J. Grollier, et al., Applied Physics Letters, vol. 78, No. 23, pp. 3663-3665, “Spin-Polarized Current Induced Switching in Co/Cu/Co Pillars”, Jun. 4, 2001.
“Novel Multilayer Configuration For Experiments of Spin Precession Induced By A DC Current”, 2002 MMM Abstract p. 248, EQ-05 (47thAnnual Conference of Magnetism & Magnetic Materials held on Nov. 11-15, 2002).

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