Magnetic cell and magnetic memory

Details Magnetic cell and magnetic memory Magnetic cell and magnetic memory

2008-05-13

2008-05-13

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000, C365S145000

Reexamination Certificate

active

11328112

ABSTRACT:
A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

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J. Grollier, et al., Applied Physics Letters, vol. 78, No. 23, pp. 3663-3665, “Spin-Polarized Current Induced Switching in Co/Cu/Co Pillars”, Jun. 4, 2001.
“Novel Multilayer Configuration For Experiments of Spin Precession Induced By A DC Current”, 2002 MMM Abstract p. 248, EQ-05 (47thAnnual Conference of Magnetism & Magnetic Materials held on Nov. 11-15, 2002).

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