Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-10-10
2006-10-10
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S173000
Reexamination Certificate
active
07120049
ABSTRACT:
A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6285581 (2001-09-01), Tehrani et al.
patent: 6469926 (2002-10-01), Chen
patent: 6590806 (2003-07-01), Bhattacharyya
patent: 6603677 (2003-08-01), Redon et al.
patent: 6639830 (2003-10-01), Heide
patent: 6714444 (2004-03-01), Huai et al.
patent: 6873542 (2005-03-01), Gider et al.
patent: 6956766 (2005-10-01), Nakamura et al.
F. J. Albert, et al., Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811, “Spin-Polarized Current Switching of a Co Thin Film Nanomagnet”, Dec. 4, 2000.
J. Grollier, et al., Applied Physics Letters, vol. 78, No. 23, pp. 3663-3665, “Spin-Polarized Current Induced Switching in Co/Cu/Co Pillars”, Jun. 4, 2001.
“Novel Multilayer Configuration For Experiments of Spin Precession Induced By a DC Current”, 2002 MMM Abstract p. 248, EQ-05 (47thAnnual Conference of Magnetism & Magnetic Materials held on Nov. 11-15, 2002).
Haneda Shigeru
Nakamura Shiho
Ohsawa Yuichi
Elms Richard
Kabushiki Kaisha Toshiba
Nguyen Hien N
LandOfFree
Magnetic cell and magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic cell and magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic cell and magnetic memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3719581