Magnetic cell and magnetic memory

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S158000, C365S173000

Reexamination Certificate

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07126848

ABSTRACT:
A magnetic cell includes a first magnetically fixed part including a laminated structure where a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer are laminated, a second magnetically fixed part including a third ferromagnetic layer, a fourth ferromagnetic layer provided between the first and the second magnetically fixed parts, a first intermediate layer provided between the first magnetically fixed part and the fourth ferromagnetic layer, and a second intermediate layer provided between the second magnetically fixed part and the fourth ferromagnetic layer, a direction of magnetization of the fourth ferromagnetic layer being determined under an influence of spin-polarized electrons upon the fourth ferromagnetic layer by passing a current between the first and the second magnetically fixed parts.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6285581 (2001-09-01), Tehrani et al.
patent: 6469926 (2002-10-01), Chen
patent: 6603677 (2003-08-01), Redon et al.
patent: 6639830 (2003-10-01), Heide
patent: 6714444 (2004-03-01), Huai et al.
patent: 6956766 (2005-10-01), Nakamura et al.
F. J. Albert, et al., Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811, “Spin-Polarized Current Switching of a Co Thin Film Nanomagnet”, Dec. 4, 2000.
J. Grollier, et al., Applied Physics Letters, vol. 78, No. 23, pp. 3663-3665, “Spin-Polarized Current Induced Switching in Co/Cu/Co Pillars”, Jun. 4, 2001.
“Novel Multilayer Configuration For Experiments of Spin Precession Induced By A DC Current”, 2002 MMM Abstract p. 248, EQ-05 (47thAnnual Conference of Magnetism & Magnetic Materials held on Nov. 11-15, 2002).

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