Magnetic cell and magnetic memory

Details Magnetic cell and magnetic memory Magnetic cell and magnetic memory

2006-10-24

2006-10-24

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

07126848

ABSTRACT:
A magnetic cell includes a first magnetically fixed part including a laminated structure where a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer are laminated, a second magnetically fixed part including a third ferromagnetic layer, a fourth ferromagnetic layer provided between the first and the second magnetically fixed parts, a first intermediate layer provided between the first magnetically fixed part and the fourth ferromagnetic layer, and a second intermediate layer provided between the second magnetically fixed part and the fourth ferromagnetic layer, a direction of magnetization of the fourth ferromagnetic layer being determined under an influence of spin-polarized electrons upon the fourth ferromagnetic layer by passing a current between the first and the second magnetically fixed parts.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6285581 (2001-09-01), Tehrani et al.
patent: 6469926 (2002-10-01), Chen
patent: 6603677 (2003-08-01), Redon et al.
patent: 6639830 (2003-10-01), Heide
patent: 6714444 (2004-03-01), Huai et al.
patent: 6956766 (2005-10-01), Nakamura et al.
F. J. Albert, et al., Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811, “Spin-Polarized Current Switching of a Co Thin Film Nanomagnet”, Dec. 4, 2000.
J. Grollier, et al., Applied Physics Letters, vol. 78, No. 23, pp. 3663-3665, “Spin-Polarized Current Induced Switching in Co/Cu/Co Pillars”, Jun. 4, 2001.
“Novel Multilayer Configuration For Experiments of Spin Precession Induced By A DC Current”, 2002 MMM Abstract p. 248, EQ-05 (47thAnnual Conference of Magnetism & Magnetic Materials held on Nov. 11-15, 2002).

Affiliated with

Also associated with

Rating

Magnetic cell and magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic cell and magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic cell and magnetic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3651162