Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2003-09-02
2008-12-30
Chen, Jack (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257SE43001, C977S932000
Reexamination Certificate
active
07470925
ABSTRACT:
A magnetic body composed of non-magnetic material, includes a plurality of localized electron regions in each of which at least one electron is confined to form a localized spin, a barrier potential region having a higher energy than a Fermi energy of an electron in the localized electron region and permitting an electron to be confined in the respective localized electron regions, and a conductive electron region including a conductive electron system having a lower energy than an energy of the barrier potential region, wherein the respective localized electron regions are disposed separate from one another via the barrier potential region and the conductive electron region.
REFERENCES:
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patent: 2001-257394 (2001-09-01), None
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Takayanagi Hideaki
Tamura Hiroyuki
Chen Jack
Nippon Telegraph and Telephone Corporation
Reames Matthew
Stockton LLP Kilpatrick
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