Magnet assembly for enhanced sputter target erosion

Details Magnet assembly for enhanced sputter target erosion Magnet assembly for enhanced sputter target erosion

1992-08-13

1994-02-01

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, C23C 1435

Patent

active

052829472

ABSTRACT:
The present invention concerns a magnet assembly for a sputtering chamber that allows for an even erosion of a target in the sputtering chamber so that atoms on the target are deposited on a wafer. This magnet assembly has a side magnet which is thinner than a center and ring magnet. This side magnet's centerplane is positioned above the centerplane of the other magnets. Additionally, this magnet assembly uses a center magnet in the range of substantially 350-450 Gauss and a side magnet of in the range of substantially 680-780 Gauss so that an asymmetrical magnetic field will be created which will cause an even erosion of the target and prevent re-deposition.

REFERENCES:
patent: 5120417 (1992-06-01), Takahashi et al.

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