Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-06-28
2011-06-28
Pham, Hoai v (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S029000, C257SE21527
Reexamination Certificate
active
07968355
ABSTRACT:
The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal dissipation. Other improvements include an embedded zener diode to protect against harmful reverse bias voltages.
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Ha, Jun-Seok, et al., “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photonics Technology Letters, vol. 20, No. 3, pp. 175-177, Feb. 1, 2008.
Mills & Onello LLP
Pham Hoai v
Samsung Electronics Co,. Ltd.
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