Luminous device and method of manufacturing the same

Details Luminous device and method of manufacturing the same Luminous device and method of manufacturing the same

2007-12-27

2009-10-27

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S082000, C257SE33001, C257SE25019, C977S762000

Reexamination Certificate

active

07608852

ABSTRACT:
A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire.

REFERENCES:
patent: 7051945 (2006-05-01), Empedocles et al.
patent: 2003/0034529 (2003-02-01), Fitzgerald et al.
patent: 2004/0213307 (2004-10-01), Lieber et al.
patent: 2006/0052947 (2006-03-01), Hu
patent: 2006/0169788 (2006-08-01), Empedocles et al.
patent: 2008/0014689 (2008-01-01), Cleavelin et al.
Aaron Prager, Strained Silicon, EE 666, Apr. 21, 2005, pp. 1-23 (www.nd.edu/˜gsnider/EE666/666—05/APrager—strainedSilicon.ppt).

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