Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-03-01
2011-03-01
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27131, C257SE27132
Reexamination Certificate
active
07897970
ABSTRACT:
In a lower substrate, a display apparatus having the lower substrate and a method of manufacturing the lower substrate, the lower substrate includes a pixel area and a circuit area. An image is displayed in the pixel area. A first signal electrode is disposed in a circuit area. A first insulating layer includes an opening, through which the first signal electrode is exposed. A second signal electrode is disposed on the first insulating layer in the circuit area, and spaced apart from the first signal electrode. A second insulating layer is disposed on the first insulating layer, and includes a contact hole, through which the first and second signal electrodes are exposed. A conductive layer electrically connects the first signal electrode to the second signal electrode. Therefore, a manufacturing process is simplified so that a yield of the lower substrate is increased.
REFERENCES:
patent: 6906776 (2005-06-01), Park et al.
patent: 6922217 (2005-07-01), Kim
patent: 7309922 (2007-12-01), Kim et al.
patent: 1399161 (2003-02-01), None
patent: 09-160076 (1997-06-01), None
patent: 2001-059971 (2001-03-01), None
patent: 1020020034822 (2002-05-01), None
English Abstract for Publication No. CN 1399161 A.
English Abstract for Publication No. 09-160076.
English Abstract for Publication No. 2001-059971.
English Abstract for Publication No. 1020020034822.
Kim Bong-Ju
Kim Hyun-Young
Tae Seung-Gyu
Yoon Joo-Sun
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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