Lower power and reduced device split local and continuous...

Details Lower power and reduced device split local and continuous... Lower power and reduced device split local and continuous...

2005-05-31

2005-05-31

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S201000, C365S190000

Reexamination Certificate

active

06901003

ABSTRACT:
A method, an apparatus, and a computer program are provided to reading indicia from an SRAM cell. A low value is generated on a write true line. A high value is generated on a continuous bit_line. The true node of the SRAM cell is evaluated through use of a floating voltage coupled to the true node of the SRAM cell. If the floating voltage stays substantially constant, the value read from the SRAM cell is a high. If the floating voltage is drained to ground, the value read from the SRAM cell is a low.

REFERENCES:
patent: 6108256 (2000-08-01), Schneider
patent: 6741493 (2004-05-01), Christensen et al.

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