Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-18
2000-10-17
Fahmy, Wael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438636, 438637, 438648, 438666, H01L 214763
Patent
active
061331422
ABSTRACT:
Reliable vias are formed by providing an adequate landing area without increasing the size of the underlying feature. Embodiments include forming a lower metal feature with an ARC layer extending beyond the side surfaces of the primary conductive portion serving as an etch stop when forming the through-hole. The overhanging portion provides a suitable landing pad without increasing the size of the underlying feature. Embodiments include ARCs having a thickness ranging from about 1000 .ANG. to about 1300 .ANG. and an overhanging portion extending beyond the side surface of the primary conductive portion up to about 0.05 microns.
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Shields Jeff
Tran Khanh
Advanced Micro Devices , Inc.
Eaton Kurt
Fahmy Wael
LandOfFree
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