Low κ dielectric inorganic/organic hybrid films and...

Details Low κ dielectric inorganic/organic hybrid films and... Low κ dielectric inorganic/organic hybrid films and...

2006-12-26

2006-12-26

Nakarani, D. S. (Department: 1773)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S209000, C428S447000, C428S450000

Reexamination Certificate

active

07153580

ABSTRACT:
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

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