Low work function, stable thin films

Details Low work function, stable thin films Low work function, stable thin films

1998-05-18

2000-12-19

Smith, Matthew

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438482, 438483, 438484, 438485, 438486, 117904, 117 3, H01L 2120

Patent

active

061627070

ABSTRACT:
Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

REFERENCES:
patent: 5726524 (1998-03-01), Debe
patent: 5886459 (1999-03-01), Auciello et al.
patent: 6019913 (2000-01-01), Dinh et al.

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