Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2006-06-06
2006-06-06
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C438S678000, C257S024000
Reexamination Certificate
active
07057203
ABSTRACT:
The present invention is directed toward methods for incorporating low work function metals and salts of such metals into carbon nanotubes for use as field emitting materials. The present invention is also directed toward field emission devices, and associated components, comprising treated carbon nanotubes that have, incorporated into them, low work function metals and/or metal salts, and methods for making same. The treatments of the carbon nanotubes with the low work function metals and/or metal salts serve to improve their field emission properties relative to untreated carbon nanotubes when employed as a cathode material in field emission devices.
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Fink Richard Lee
Mao Dongsheng
Pavlovsky Igor
Yaniv Zvi
Kordzik Kelly K.
Le Thao P.
Mickelson Edward
Nano-Proprietary, Inc.
Winstead Sechrest & Minick P.C.
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