Low voltage transistor structure having a grooved gate

Details Low voltage transistor structure having a grooved gate Low voltage transistor structure having a grooved gate

1997-10-24

2000-07-18

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257396, 257401, 257407, 257622, 438259, H01L 2976

Patent

active

060911069

ABSTRACT:
Disclosed is a transistor structure having a semiconductor substrate with a active region and a field region, a recess region being defined by either the field region or the active region, a gate electrode formed on portions of the active and recess region, and impurity regions formed in the active region of the semiconductor substrate on either side of the gate electrode. The transistor structure has an active region with at least one groove formed therein, and the transistor structure being formed for a low voltage operation.

REFERENCES:
patent: 5208173 (1993-05-01), Yamada et al.
patent: 5285096 (1994-02-01), Ando et al.
patent: 5831323 (1998-11-01), Motonami et al.
patent: 5905283 (1999-05-01), Kasai

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