Low voltage silicon controlled rectifier (SCR) for...

Details Low voltage silicon controlled rectifier (SCR) for... Low voltage silicon controlled rectifier (SCR) for...

2005-06-21

2005-06-21

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000

Reexamination Certificate

active

06909149

ABSTRACT:
A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device that can protect very sensitive thin gate oxides by limiting the power dissipation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment, the invention provides very low triggering and holding voltages. Furthermore, the SOI protection device of the present invention has low impedance and low power dissipation characteristics that reduce voltage build-up, and accordingly, enable designers to fabricate more area efficient protection device

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