Low voltage-operated semiconductor integrated circuit

Details Low voltage-operated semiconductor integrated circuit Low voltage-operated semiconductor integrated circuit

1990-03-20

1991-01-08

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365203, 357 43, G11C 1300, G11C 1140

Patent

active

049842021

ABSTRACT:
A large-scale semiconductor integrated circuit comprising a low voltage-operated CMOS internal circuit, input and output circuits having bipolar transistors, said low voltage-operated CMOS internal circuit being supplied with an internal power supply voltage which is produced by dropping an external power supply voltage, and a level shifting circuit which converts the levels of signals in the chip. The input and output signals have the ECL level or the TTL level. The low voltage-operated CMOS internal circuit includes, for example, a DRAM of greater than 4 megabits and a microprocessor, and the internal operation voltage is smaller than 1.5 V. By the structure, a high-speed, low-power-consumption and low-noise semiconductor device is provided.

REFERENCES:
patent: 4916667 (1990-04-01), Miyabayashi et al.

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