Low voltage non-volatile memory cell with electrically...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S330000, C257S390000, C257SE27103

Reexamination Certificate

active

07554151

ABSTRACT:
An EEPROM having a charge storage element, i.e., a floating gate, in the substrate adjacent to vertically separated source and drain electrodes. An electrically transparent poly control gate allows relatively low voltages to be used for program, erase, and read operations when a plurality of similar devices are arranged in a memory array. A second poly member, called a tunnel poly member, communicates with source and drain electrodes in synchronism with the poly control gate to provide charge carriers to the floating gate. Manufacturing involves a series of layers with minimal needs for photolithography.

REFERENCES:
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patent: 6052311 (2000-04-01), Fu
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patent: 6958513 (2005-10-01), Wang
patent: 2004/0004863 (2004-01-01), Wang
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patent: 2005/0194632 (2005-09-01), Lojek
patent: WO-2007056682 (2007-05-01), None
“International Search Report and Written Opinion for Application No. PCT/US06/60510”, 8 pages , Mar. 28, 2008.

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