Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-03
2009-06-30
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S390000, C257SE27103
Reexamination Certificate
active
07554151
ABSTRACT:
An EEPROM having a charge storage element, i.e., a floating gate, in the substrate adjacent to vertically separated source and drain electrodes. An electrically transparent poly control gate allows relatively low voltages to be used for program, erase, and read operations when a plurality of similar devices are arranged in a memory array. A second poly member, called a tunnel poly member, communicates with source and drain electrodes in synchronism with the poly control gate to provide charge carriers to the floating gate. Manufacturing involves a series of layers with minimal needs for photolithography.
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“International Search Report and Written Opinion for Application No. PCT/US06/60510”, 8 pages , Mar. 28, 2008.
Atmel Corporation
Quach Tuan N.
Schwegman Lundberg & Woessner, P.A.
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