Low voltage MOSFET with low on-resistance and high breakdown vol

Details Low voltage MOSFET with low on-resistance and high breakdown vol Low voltage MOSFET with low on-resistance and high breakdown vol

1995-12-12

1999-08-17

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257342, H01L 2976

Patent

active

059397527

ABSTRACT:
A low voltage power MOSFET is disclosed which includes spaced apart base regions defining a conduction region therebetween. A highly doped region is provided adjacent the conduction region and is spaced from the base regions, being substantially equidistant thereto and extending therebelow. The spacing of the highly doped region from the base regions provides enhanced conductivity of the device and avoids the problem of device breakdown and punchthrough in regard to the source regions of the low voltage power device.

REFERENCES:
patent: 4366495 (1982-12-01), Goodman et al.
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4642666 (1987-02-01), Lidow et al.
patent: 4680853 (1987-07-01), Lidow et al.
patent: 4705759 (1987-11-01), Lidow et al.
patent: 5053838 (1991-10-01), Fijihira
patent: 5229634 (1993-07-01), Yoshioka et al.

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