Low voltage, low power static random access memory cell

Details Low voltage, low power static random access memory cell Low voltage, low power static random access memory cell

1997-04-02

1998-10-27

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365174, 36523005, G11C 700

Patent

active

058285970

ABSTRACT:
A ten transistor low voltage, low power static random access memory cell (10) includes a first inverter (12) cross-coupled to a second inverter (18). A series combination of a first pass transistor (24) and a first bitline select transistor (28) is connected between an output node (13) of the first inverter (12) and a first bitline (36). A first write pass transistor (32) is placed in parallel with the first pass transistor (24). A series combination of a second pass transistor (26) and a second bitline select transistor (30) is connected between an output node (17) of the second inverter (18) and a second bitline (38). A second write pass transistor (34) is placed in parallel with the second pass transistor (26).

REFERENCES:
patent: 5353251 (1994-10-01), Uratani et al.
patent: 5469380 (1995-11-01), Iio
patent: 5475638 (1995-12-01), Anami et al.

Affiliated with

Also associated with

Rating

Low voltage, low power static random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low voltage, low power static random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage, low power static random access memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1619159