Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S005000, C438S010000, C438S017000, C438S130000, C438S466000, C257SE21682, C257SE27103, C365S145000
Reexamination Certificate
active
07075140
ABSTRACT:
A non-volatile memory array includes memory cells connected in a common source arrangement and formed in columns of isolated well regions so that Fowler-Nordheim tunneling is used for both write and erase operations of the memory cells. The memory arrays can be formed as NOR arrays or NAND arrays. In one embodiment, the memory array of the present invention is formed as a byte alterable EEPROM with parallel access. In another embodiment, an insulated gate bipolar transistor (IGBT) is coupled to the memory cells to increase the cell read current of the memory array. When the memory array incorporates IGBTs on the bitlines, the cell read current becomes independent of the wordline voltages. Thus, the memory array of the present invention can be operated at low voltages. The use of IGBTs in the memory array of the present invention enables formation of embedded non-volatile memories in low-voltage digital integrated circuits.
REFERENCES:
patent: 6201732 (2001-03-01), Caywood
patent: 6310800 (2001-10-01), Takahashi
patent: 6404681 (2002-06-01), Hirano
patent: 6438030 (2002-08-01), Hu et al.
patent: 6451652 (2002-09-01), Caywood et al.
patent: 6606265 (2003-08-01), Bergemont et al.
patent: 6649453 (2003-11-01), Chen et al.
patent: 2001/0000306 (2001-04-01), Yoon et al.
patent: 198 23 733 A 1 (1999-12-01), None
Chi-nan Brian Li et al., “A Novel Uniform-Channel-Program-Erase (UCPE) Flash EEPROM Using An Isolated P-well Structure,” IEDM 2000, pp. 33.5.1-33.5.4.
International Search Report, 6 pages.
Cook Carmen C.
Patent Law Group LLP
LandOfFree
Low voltage EEPROM memory arrays does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low voltage EEPROM memory arrays, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage EEPROM memory arrays will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3541252