Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1997-04-22
1999-01-05
Hoang, Huan
Static information storage and retrieval
Systems using particular element
Capacitors
365205, 365207, 365206, G11C 1124
Patent
active
058569391
ABSTRACT:
A low voltage high density memory device is described. The memory device uses isolation transistors to adjust the voltage stored on memory cells. The memory device is designed to reduce the differential voltage between memory cells storing different data states. A method is described for reducing leakage current of the memory cells to decrease the need for excessive refresh operations. The memory device is described as operating on a one volt supply and producing a 250 mv digit line swing.
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Inaba, T., et al., "A 250mV Bit-Line Swing Scheme for a 1V 4Gb DRAM", 1995 Symposium on VLSI Circuits Digest of Technical Papers, Toshiba Corporation, (2 pgs.).
Hoang Huan
Micro)n Technology, Inc.
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