Low voltage dynamic memory

Details Low voltage dynamic memory Low voltage dynamic memory

1995-11-13

1997-06-03

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365149, 365207, G11C 700

Patent

active

056361700

ABSTRACT:
A low voltage high density memory device is described. The memory device uses isolation transistors to adjust the voltage stored on memory cells. The memory device is designed to reduce the differential voltage between memory cells storing different data states. A method is described for reducing leakage current of the memory cells to decrease the need for excessive refresh operations. The memory device is described as operating on a one volt supply and producing a 250 mv digit line swing.

REFERENCES:
patent: 5414662 (1995-05-01), Foss et al.
patent: 5444662 (1995-08-01), Tanaka et al.
T. Inaba, et al., "A 250mV Bit-Line Swing Scheme for a 1V 4Gb DRAM", 1995 Symposium on VLSI Circuits Digest of Technical Papers, Toshiba Corporation, (2 pgs.).

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