Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-03-29
1994-02-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, 257901, H01L 2968, H01L 2978
Patent
active
052869920
ABSTRACT:
A semiconductor or substrate of a first conductivity type includes a well structure of a second conductivity type formed therein. A first low voltage MOS transistor includes spaced apart source and drain regions of the first conductivity type in the well. A first transistor gate lies above a channel region which is disposed between the source and drain regions of the first low voltage MOS transistor and is separated therefrom by a gate dielectric having a first thickness. A second high voltage transistor includes spaced apart source and drain regions of the first conductivity type in the well. A second transistor gate lies above a channel region which is disposed between the source and drain regions of the second high voltage transistor and is separated therefrom by a gate dielectric having a second thickness which is greater than the thickness of the gate dielectric of the first low voltage MOS transistor. A first contact diffusion, having the same conductivity type as the well, is located at the edge of the well closest to the first low voltage transistor, and is connected to a source of voltage. A second contact diffusion, having the same conductivity type as the well, is located at the edge of the well closest to the second high voltage transistor, and is also connected to the source of voltage.
REFERENCES:
patent: 4822750 (1989-04-01), Perlegos et al.
patent: 4829350 (1989-05-01), Miller
patent: 4851364 (1989-07-01), Yatsuda et al.
patent: 4878199 (1989-10-01), Mizutani
patent: 4937471 (1990-06-01), Park et al.
Sze, S. M. Physics of Semiconductor Devices, John Wiley, 1981, pp. 438-445.
Ahrens Michael G.
Eltoukhy Abdelshafy
Galbraith Douglas C.
Actel Corporation
Crane Sara W.
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