Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-02-01
2005-02-01
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S226000
Reexamination Certificate
active
06850428
ABSTRACT:
A low voltage detector and method of detecting low voltage of a nonvolatile memory chip is disclosed wherein a memory cell does not operate in a low voltage and definitly discriminate activation and deactivation voltage area of the chip by synchronizing operation start and stop points of a FeRAM cell to a chip enable signal according to variation of system power for safely operating the chip in threshold voltage region. In this way, because the chip safely operates even the threshold voltage region such as the on/off states of power voltage, the chip can be protected even at the on/off states of power voltage and the layout area of the chip becomes efficient without having additional circuits.
REFERENCES:
patent: 5574679 (1996-11-01), Ohtsuki et al.
patent: 6201731 (2001-03-01), Kamp et al.
Hynix / Semiconductor Inc.
Jacobson & Holman PLLC
Phung Anh
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