Electronic digital logic circuitry – Tri-state
Reexamination Certificate
2006-10-27
2008-10-07
Barnie, Rexford (Department: 2819)
Electronic digital logic circuitry
Tri-state
C326S058000
Reexamination Certificate
active
07432739
ABSTRACT:
A low voltage complementary metal oxide semiconductor (CMOS) process tri-state buffer includes a logic device, a biasing device and a switch device. The logic device receives an input signal and an enable signal and generates a first control signal and a second control signal. The biasing device receives the first control signal and thus controls a voltage level of a third control signal. The switch device receives the second and third control signals and respectively couples an output terminal to a first external voltage source and a second external voltage source when the second and third control signals are enabled. When the enable signal is disabled, the second and third control signals are simultaneously disabled so that the output terminal is floating with respect to the first and second external voltage sources and the output terminal is held in a high impedance state.
REFERENCES:
patent: 5396128 (1995-03-01), Dunning et al.
patent: 5576635 (1996-11-01), Partovi et al.
patent: 5929654 (1999-07-01), Park et al.
patent: 6225824 (2001-05-01), Madhu et al.
patent: 6236236 (2001-05-01), Chen
patent: 6320415 (2001-11-01), Lee
patent: 7239177 (2007-07-01), Bansal
patent: 2002/0021144 (2002-02-01), Morgan et al.
patent: 2005/0104622 (2005-05-01), Chen et al.
Chen Ti-Wen
Chen Tzung-Shen
Liao Chun-Yu
Barnie Rexford
Crawford Jason M
Macronix International Co. Ltd.
Rabin & Berdo P.C.
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