Low voltage charge pumps using p-well driven MOS capacitors

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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327390, 327534, 327589, H03K 301, H03K 1901

Patent

active

053861515

ABSTRACT:
A low voltage charge pump operable with a low voltage power supply and a clock signal is provided for delivering a final output voltage which is higher than the supply voltage. The low voltage charge pump comprises MOS capacitors formed of MOS devices, each capacitor including a p-well acting as a plate of the respective capacitor. Through this arrangement, the effective area of the capacitor is increased resulting in an increase in capacitance. Therefore, a more efficient charge pumping effect is provided in a low voltage power supply such as 3.3 volts. The p-well of each of the capacitor is driven from ground voltage to one threshold voltage less than the supply voltage to minimize forward bias of the p-wells and the n-type substrates of the MOS devices.

REFERENCES:
patent: 3983414 (1976-09-01), Stafford et al.
patent: 5008799 (1991-04-01), Montalvo
patent: 5059815 (1991-10-01), Bill et al.
patent: 5075571 (1991-12-01), Dhong et al.
patent: 5172013 (1992-12-01), Matsumura
IEEE Journal of Solid State Circuits vol. SC.11, No. 3, Jun. 1976 (attached) pp. 374-378, Dickson, "On Chip High Voltage Generation in MNOS Integrated Circuits Using An Improved Voltage Multiplier Technique".

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