Low voltage BiCMOS and high voltage BiCMOS the same substrate

Details Low voltage BiCMOS and high voltage BiCMOS the same substrate Low voltage BiCMOS and high voltage BiCMOS the same substrate

1991-07-09

1992-04-14

Hille, ROlf

357 42, 357234, 357 34, 357 40, H01L 2702, H01L 2910, H01L 2972

Patent

active

051052520

ABSTRACT:
The present invention relates to a semiconductor device which has not only high performance memory and logic by forming the low voltage and high voltage BiCMOS transistors in the same single semiconductor substrate,but also various functions and driving voltages by increasing the output power and noise margin, wherein the miniaturization of electronic products can be achieved by forming the low and high voltage BiCMOS transistors with various functions and also can achieve the high speed operation since a signal processing speed becomes fast.

REFERENCES:
patent: 4628341 (1986-12-01), Thomas
patent: 4697202 (1987-09-01), Shen

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