Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-08-11
1999-12-07
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257217, 257392, 257403, 257900, H01L 29784
Patent
active
059988479
ABSTRACT:
An active FET body device which comprises an active FET region including a gate, a body region and electrical connection between said gate and said body region that is located within the active FET region is provided along with various methods for fabricating the devices. The electrical connection extends over substantially the entire width of the FET.
REFERENCES:
patent: 5120666 (1992-06-01), Gotou
patent: 5298443 (1994-03-01), Jang
patent: 5714393 (1998-02-01), Wild et al.
patent: 5834816 (1998-11-01), Jang
patent: 5852319 (1998-12-01), Chikamatsu et al.
Mandelman et al, Floating-Body Concerns for SOI Dynamic Random Access Memory (DRAM), Proceedings 1996 IEEE International SOI Conference, Oct. 1996: 136-137.
Assaderaghi Fariborz
Bertin Claude L.
Gambino Jeffrey P.
Hsu Louis Lu-Chen
Mandelman Jack Allan
Dietrich Michael
International Business Machines - Corporation
Monin, Jr. Donald L.
Shkurko Eugene I.
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