Low volt/high volt transistor

Details Low volt/high volt transistor Low volt/high volt transistor

2005-04-12

2005-04-12

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S387000, C257S390000, C257S391000, C257S395000, C438S217000, C438S276000, C438S289000, C438S291000

Reexamination Certificate

active

06879007

ABSTRACT:
A semiconductor device has at least one high-voltage and low-voltage transistor on a single substrate. The reliability of the high-voltage transistor is enhanced by performing a LDD implantation in only the high-voltage transistor prior to conducting an oxidation process to protect the substrate and gate electrode. After the oxidation process is performed, the low-voltage transistor is subjected to an LDD implantation process. The resultant semiconductor device provides a high-voltage transistor having a deeper LDD region junction depth than the low-voltage transistor, ensuring reliability and performance.

REFERENCES:
patent: 5795803 (1998-08-01), Takamura et al.
patent: 5834352 (1998-11-01), Choi
patent: 5847432 (1998-12-01), Nozaki
patent: 6267479 (2001-07-01), Yamada et al.
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patent: 6468849 (2002-10-01), Effland et al.
patent: 6468860 (2002-10-01), Polavarapu et al.
patent: 6541321 (2003-04-01), Buller et al.
patent: 2000-31292 (2000-01-01), None

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