Low triggering voltage ESD protection structure and method...

Details Low triggering voltage ESD protection structure and method... Low triggering voltage ESD protection structure and method...

2006-10-03

2006-10-03

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S362000

Reexamination Certificate

active

07115951

ABSTRACT:
In a triggering ESD protection structure, the triggering voltage is reduced by introducing one or more corners or spikes into the p-n breakdown junction. This may be done by providing a polygate with a zig-zag pattern to define triangular corners in the drain or anode of the structure.

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patent: 5949094 (1999-09-01), Amerasekera
patent: 6388292 (2002-05-01), Lin
patent: 6593157 (2003-07-01), Chen et al.
patent: 6605493 (2003-08-01), Yu
patent: 1-251663 (1989-10-01), None

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