Low threshold voltage PMOS apparatus and method of...

Details Low threshold voltage PMOS apparatus and method of... Low threshold voltage PMOS apparatus and method of...

2008-06-03

2008-06-03

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S156000, C438S173000

Reexamination Certificate

active

07382024

ABSTRACT:
A P-type metal oxide semiconductor (PMOS) device can include an N-well that does not extend completely throughout the active region of the PMOS device. For example, the PMOS device can be fabricated using a masking step to provide an N-well having an inner perimeter and an outer perimeter. The inner perimeter of the N-well surrounds at least a portion of the active region of the PMOS device. According to an embodiment, the inner perimeter of the N-well surrounds the entire active region. The PMOS device can include a deep N-well in contact with the N-well.

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