Low-temperature synthesis of group III-group V semiconductors

Details Low-temperature synthesis of group III-group V semiconductors Low-temperature synthesis of group III-group V semiconductors

1990-10-23

1992-01-28

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156603, 156610, 156613, 156621, 156624, 156DIG71, 156DIG111, 4272481, 4272551, 437 81, 556 1, 556 27, 556 64, C30B 1100

Patent

active

050841289

ABSTRACT:
This invention relates to a low-temperature process for the preparation of group III-group V semiconducting material. More particularly, in the present process at least one group III compound is reacted with at least one group V compound in an aprotic solvent to form a precursor, which is then heated to form the semiconducting material.

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A. H. Cowley et al., Agnew. Chem. Int. Ed. Engl. 28, pp. 1208-1215, 1989, Single-Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors.
Howard M. Manasevit, Appl. Phys. Lett., vol. 12, No. 4, pp. 156-159, 1968, Single-Crystal Gallium Arsenide on Insulting Substrates.
Crowley et al., J. Amer. Chem. Soc., vol. 110, pp. 6248-6249, 1988, Organometallic Chemical Vapor Deposition of III/V Compound Semiconductors with Novel Organometallic Precursors.

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