Low temperature sub-atmospheric ozone oxidation process for maki

Details Low temperature sub-atmospheric ozone oxidation process for maki Low temperature sub-atmospheric ozone oxidation process for maki

1997-01-07

1999-08-31

Fourson, George R.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438770, H01L 21316

Patent

active

059465883

ABSTRACT:
A process for making thin gate oxides comprising the layering of a semiconductor substrate with at least an oxide layer and a nitride layer. The layers are then patterned and etched, thereby exposing portions of the substrate. The substrate is then doped, thereby creating a channel stop region. The exposed portions of the substrate are oxidized, thereby creating a field oxide region. The oxide and nitride layers are removed, thereby exposing sites of active areas, and a gate oxide layer grown in an ozone-containing atmosphere.

REFERENCES:
patent: 5294571 (1994-03-01), Fujishiro et al.
patent: 5330935 (1994-07-01), Dobuzinski et al.
patent: 5352620 (1994-10-01), Komori et al.
Nayan et al, "Atmospheric Pressure, Low Temperature (500.degree.) UV/ozone Oxidation of Silicon", Elect. Lett. Feb., 1,1990, Oct. 26, No. 3, pp. 205-206.
Kazor, A., et al, "Ozone Induced Rapid Low Temperature Oxidation of Silicon", Appl. Phys. Lett., 63(18) Nov. 1, 1993 pp. 2517-2519.
Kazor, A., et al, "Growth Rate Enhancement Using Ozone . . . Silicon", Appl. Phys. Lett. 65(4), Jul. 25, 1994, pp. 412-414.

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