Low temperature, single side, multiple step etching process for

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156644, 156662, 346140R, C23F 100

Patent

active

051319780

ABSTRACT:
A fabrication process for wafer derived elements such as channel plates for thermal ink jet printers includes formation of a final etchant pattern in first and second masking layers. The second masking layer is a protective layer to prevent removal of the first layer upon removal of a subsequent third masking layer. Preferably, the second masking layer is an oxide applied under low temperature condition to lessen the possibility of inducing formation of oxygen precipitates in the wafer. A third masking layer is formed over the final etchant pattern formed by the first and second masking layers. The third masking layer is patterned to form a precursor structure of a large structure contained in the final etchant pattern. After formation of the precursor structure, the third masking layer is removed and the wafer is subjected to a final etching exposure to form the final etched structures. The process is useful for forming channel plates for thermal ink jet printheads.

REFERENCES:
patent: Re32572 (1988-01-01), Hawkins et al.
patent: 4601777 (1986-07-01), Hawkins et al.
patent: 4789425 (1988-12-01), Drake et al.
patent: 4961821 (1990-10-01), Drake et al.

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