Low temperature silicided tip

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S163000, C365S034000

Reexamination Certificate

active

07142449

ABSTRACT:
A tip, connected to a metal chip component, for forming readable changes in a memory storage system is disclosed. The tip includes a conductive layer, an amorphous silicon layer, and a silicide outer layer. The silicide outer layer contains a metal that has an anneal temperature to form the silicide outer layer at a temperature below that which damages the chip component.

REFERENCES:
patent: 5446684 (1995-08-01), Kaneko et al.
patent: 5483741 (1996-01-01), Akram et al.
patent: 5504376 (1996-04-01), Sugahara et al.
patent: 5546375 (1996-08-01), Shimada et al.
patent: 5592736 (1997-01-01), Akram et al.
patent: 6414506 (2002-07-01), Akram et al.
patent: 6818921 (2004-11-01), Yasukawa
patent: 0792518 (2003-04-01), None
patent: WO96/14660 (1996-05-01), None

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