Low temperature selective growth of silicon or silicon alloys

Details Low temperature selective growth of silicon or silicon alloys Low temperature selective growth of silicon or silicon alloys

1995-06-06

1997-01-21

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117932, 437 83, H01L 2120

Patent

active

055956009

ABSTRACT:
Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an oxide of an element selected from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium; and then growing the epitaxial layer over the wafer at temperatures below 650.degree. C. The epitaxial and polycrystalline layers do not grow on the masking layer. The invention overcomes the problem of forming epitaxial layers at temperatures above 650.degree. C. by providing a lower temperature process.

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