Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-12
1998-08-04
Everhart, Garidad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, 438680, 438627, H01L 2144
Patent
active
057893179
ABSTRACT:
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.
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Batra Shubneesh
Sandhu Gurtej
Everhart Garidad
Micro)n Technology, Inc.
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